Schottky barrier height dependence on the silicon interlayer thickness of Au\Si\n-GaAs contacts : chemistry of interface formation study

By Ivanco J.   Almeida J.   Coluzza C.   Zwick F.   Margaritondo G.  

Vacuum, Vol. 50, Iss. 3, 1998-07 ,pp. : 407-411

Elsevier

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The bistable switching property of a porous-silicon Schottky barrier diode during the charging period

By Lue J.T.   Chang C.S.   Chen C.Y.   Huang W.C.  

Thin Solid Films, Vol. 339, Iss. 1, 1999-02 ,pp. : 294-298

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Optical and electronic characterization of transition layer in thin film Au-GaAs Schottky barrier

By Dmitruk N.L.   Borkovskaya O.Y.   Fursenko O.V.  

Vacuum, Vol. 50, Iss. 3, 1998-07 ,pp. : 439-443

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The influence of the spatial structure on the electronic properties of porous silicon: quantum chemical study

By Gavartin J.L.   Matthai C.C.   Morrison I.  

Thin Solid Films, Vol. 255, Iss. 1, 1995-01 ,pp. : 39-42

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Ultraviolet responsivity control in Schottky barrier heterostructures with textured interface

By Dmitruk N.L.   Borkovskaya O.Y.   Mamontova I.B.   Mayeva O.I.   Yastrubchak O.B.  

Thin Solid Films, Vol. 364, Iss. 1, 2000-03 ,pp. : 280-283

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