The interface characteristics of passivity anodic oxide films on Hg 0.8 Cd 0.2 Te by C-V measurements

By Ngoc N.T.B.   Nha N.V.  

Thin Solid Films, Vol. 334, Iss. 1, 1998-12 ,pp. : 40-43

Elsevier

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Pragmatic Approach to the Characterization of SiC/SiO₂ Interface Traps near the Conduction Band with Split C-V and Hall Measurements

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Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 477-480

Trans Tech Publications

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New interpretation of C–V measurements for determining the concentration profile in a semiconductor

By Yaremchuk A.F.  

Applied Physics A, Vol. 73, Iss. 4, 2001-10 ,pp. : 503-509

Springer Publishing Company

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New sputter process for VO 2 thin films and examination with MIS-elements and C-V-measurements

By Schlag H.J.   Scherber W.  

Thin Solid Films, Vol. 366, Iss. 1, 2000-05 ,pp. : 28-31

Elsevier

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A study of Al/Si 3 N 4 /ultrathin Si/GaAs structures by DLTS and C-V measurements

By Pinck E.   Bartos J.   Brunner R.   Ivanco J.  

Thin Solid Films, Vol. 433, Iss. 1, 2003-06 ,pp. : 352-358

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