Growth of Si 1-y C y /Si- and Si 1-x-y Ge x C y /Si-multiple quantum wells using molecular beam epitaxy

By Hartmann R.   Grutzmacher D.   Muller E.   Gennser U.   Dommann A.   Schroter P.   Warren P.  

Thin Solid Films, Vol. 318, Iss. 1, 1998-04 ,pp. : 158-162

Elsevier

Access to resources Recommend Favorite

Low-temperature molecular beam epitaxy of Si 1-x-y Ge x C y /Si quantum well structures: electrical and optical properties

By Grutzmacher D.   Hartmann R.   Schnappauf P.   Gennser U.   Muller E.   Bachle D.   Dommann A.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 26-32

Elsevier

Access to resources Recommend Favorite

Optical and electrical properties of Si 1-x-y Ge x C y thin films and devices

By St. Amour A.   Chang C.L.   Lanzerotti L.D.   Sturm J.C.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 112-117

Elsevier

Access to resources Recommend Favorite

New Ge substrate cleaning method for Si 1-x-y Ge x C y MOMBE growth

By Akane T.   Okumura H.   Tanaka J.   Matsumoto S.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 153-156

Elsevier

Access to resources Recommend Favorite

Optical characterization of thermally oxidized Si 1-x-y Ge x C y layers

By Cuadras A.   Garrido B.   Bonafos C.   Morante J.R.   Fonseca L.   Franz M.   Pressel K.  

Thin Solid Films, Vol. 364, Iss. 1, 2000-03 ,pp. : 233-238

Elsevier

Access to resources Recommend Favorite