Optimized processing for differentially molecular beam epitaxy-grown SiGe(C) devices

By Lippert G.   Osten H.J.   Blum K.   Sorge R.   Schley P.   Kruger D.   Fischer G.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 21-25

Elsevier

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Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

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Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 84-87

Elsevier

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Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell

By Yaguchi H.   Yamamoto T.   Shiraki Y.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 241-244

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Growth of Si 1-y C y /Si- and Si 1-x-y Ge x C y /Si-multiple quantum wells using molecular beam epitaxy

By Hartmann R.   Grutzmacher D.   Muller E.   Gennser U.   Dommann A.   Schroter P.   Warren P.  

Thin Solid Films, Vol. 318, Iss. 1, 1998-04 ,pp. : 158-162

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Role of strain in dopant surface segregation during Si and SiGe growth by molecular beam epitaxy

By Ni W.-X.   Hansson G.V.   Cardenas J.   Svensson B.G.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 131-135

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