Low-temperature molecular beam epitaxy of Si 1-x-y Ge x C y /Si quantum well structures: electrical and optical properties

By Grutzmacher D.   Hartmann R.   Schnappauf P.   Gennser U.   Muller E.   Bachle D.   Dommann A.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 26-32

Elsevier

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Growth of Si 1-x-y Ge x C y multi-quantum wells: Structural and optical properties

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Thin Solid Films, Vol. 278, Iss. 1, 1996-05 ,pp. : 114-117

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Optical characterization of thermally oxidized Si 1-x-y Ge x C y layers

By Cuadras A.   Garrido B.   Bonafos C.   Morante J.R.   Fonseca L.   Franz M.   Pressel K.  

Thin Solid Films, Vol. 364, Iss. 1, 2000-03 ,pp. : 233-238

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Doping and electrical characteristics of in-situ heavily B-doped Si 1-x-y Ge x C y films epitaxially grown using ultraclean LPCVD

By Noda T.   Lee D.   Shim H.   Sakuraba M.   Matsuura T.   Murota J.  

Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. : 57-60

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Heteroepitaxial Si 1-x-y Ge x C y films on (100)Si substrates for future low-power applications

By Alford T.L.   Bair A.E.   Atzmon Z.   Stout L.M.   Balster S.G.   Schroder D.K.   Roedel R.J.  

Thin Solid Films, Vol. 270, Iss. 1, 1995-12 ,pp. : 632-636

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