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Large Threshold Voltage Shifts of Nanostructured-Thin Film ZnS:Mn Electroluminescent Devices

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Phosphor efficiency and deposition temperature in ZnS:Mn A.C. thin film electroluminescence display devices

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Electroluminescent ZnS:Mn films prepared at 220-450 o C using complex compounds with sulphur-containing ligands

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High quality ZnS:Mn thin films grown by quasi-rheotaxy for electroluminescent devices

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