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Elsevier

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Hydrogenation in laser annealed polysilicon thin-film transistors (TFTs)

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Characteristics of Thin-Film Transistors Fabricated by the Excimer Laser-Annealed Amorphous Silicon in Ultralow Oxygen Concentrations

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Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665 o C strain point glass substrates

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High mobility thin film transistors by Nd:YVO4-laser crystallization

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