Ge-Si intermixing in Ge quantum dots on Si

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Low-temperature molecular beam epitaxy of Si 1-x-y Ge x C y /Si quantum well structures: electrical and optical properties

By Grutzmacher D.   Hartmann R.   Schnappauf P.   Gennser U.   Muller E.   Bachle D.   Dommann A.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 26-32

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HRTEM study of Si 1-x Ge x multilayer

By Werckmann J.   Ulhaq-Bouillet C.   Romeo M.   Chelly R.   Teodorescu C.   Ghica C.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 80-83

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Spectroscopy of intersubband transitions in Si-Si 1-x Ge x quantam wells

By Boucaud P.   Wu L.   Julien F.H.   Lourtioz J.-M.   Sagnes I.   Campidelli Y.   Prazeres R.   Ortega J.-M.  

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Controlling the strain and light emission from Si-Si 1-x Ge x quantum dots

By Tang Y.S.   Hicks S.E.   Sotomayor Torres C.M.   Wilkinson C.D.W.   Ni W.X.   Hansson G.V.  

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