Homoepitaxial growth of GaN thin layer by molecular beam epitaxy with an RF nitrogen plasma

By Kubo S.   Kurai S.   Taguchi T.  

Vacuum, Vol. 59, Iss. 1, 2000-10 ,pp. : 277-283

Elsevier

Access to resources Recommend Favorite

Growth and optical properties of epitaxial GaN films on Si(111) using single gas-source molecular beam epitaxy

By Torrison L.   Tolle J.   Tsong I.S.T.   Kouvetakis J.  

Thin Solid Films, Vol. 434, Iss. 1, 2003-06 ,pp. : 106-111

Elsevier

Access to resources Recommend Favorite

Silicon behavior in GaN grown by radiofrequency plasma molecular beam epitaxy

By Li W.   Li A.  

Thin Solid Films, Vol. 401, Iss. 1, 2001-12 ,pp. : 279-283

Elsevier

Access to resources Recommend Favorite

Characteristics of GaN epilayer grown on Al 2 O 3 with AlN buffer layer by molecular beam epitaxy

By Jeon H.C.   Lee H.S.   Si S.M.   Jeong Y.S.   Na J.H.   Park Y.S.   Kang T.W.   Eung Oh J.  

Current Applied Physics, Vol. 3, Iss. 4, 2003-06 ,pp. : 385-388

Elsevier

Access to resources Recommend Favorite

Microstructure of M-plane GaN epilayers grown on -LiAlO 2 by plasma-assisted molecular beam epitaxy

By T. Y. Liu   A. Trampert   Y. J. Sun   O. Brandt   K. H. Ploog  

Philosophical Magazine Letters, Vol. 84, Iss. 7, 2004-07 ,pp. : 435-441

Taylor & Francis Ltd

Access to resources Recommend Favorite