Author： Altukhov I.V. Kagan M.S. Sinis V.P. Thomas S.G. Wang K.L. Blom A. Odnoblyudov M.O.
Publisher： Elsevier
ISSN： 0040-6090
Source： Thin Solid Films, Vol.380, Iss.1, 2000-12, pp. : 218-220
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
ESR investigations of modulation-doped Si/SiGe quantum wells
By Sandersfeld N. Jantsch W. Wilamowski Z. Schaffler F.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :
Access to resources
Recommend
Local-symmetry effect on light emissivity from SiGe quantum wells
By Nakagawa K. Kimura Y. Hirao M. Miyao M.
Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. :
Photoconductivity of Si/Ge buffers, superlattices, and multiple quantum wells
By Menzel D. Koschinski W. Dettmer K. Schoenes J.
Thin Solid Films, Vol. 342, Iss. 1, 1999-03 ,pp. :
IR absorption and quantum efficiency of highly p-doped SiGe layers
By Uschmann J. Thonke K. Sauer R. Presting H. Kibbel H. Cabanski W. Jaros M.
Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. :
Terahertz emission of SiGe/Si quantum wells
By Kagan M.S. Altukhov I.V. Sinis V.P. Thomas S.G. Wang K.L. Chao K.A. Yassievich I.N.
Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. :