Gate/drain bias-induced degradation effects in TFTs fabricated in unhydrogenated SPC polycrystalline silicon films

Author: Kouvatsos D.N.   Davazoglou D.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.426, Iss.1, 2003-02, pp. : 250-257

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Abstract