Characterization of ZnSe films grown on GaAs substrates with In x Ga l-x As and Al x Ga 1-x As buffer layers

By Luyo-Alvarado J.   Santana-Aranda M.A.   Melendez-Lira M.   Lopez-Lopez M.   Mendez V.H.   Vidal M.A.   Yonezu H.  

Thin Solid Films, Vol. 373, Iss. 1, 2000-09 ,pp. : 37-40

Elsevier

Access to resources Recommend Favorite

Characteristics of GaN epilayer grown on Al 2 O 3 with AlN buffer layer by molecular beam epitaxy

By Jeon H.C.   Lee H.S.   Si S.M.   Jeong Y.S.   Na J.H.   Park Y.S.   Kang T.W.   Eung Oh J.  

Current Applied Physics, Vol. 3, Iss. 4, 2003-06 ,pp. : 385-388

Elsevier

Access to resources Recommend Favorite

Tetrapod-Like ZnO Nanostructures Deposited on Si Substrates with AlN as Buffer Layer

By Chuah L.S.  

Composite Interfaces, Vol. 18, Iss. 1, 2011-02 ,pp. : 49-56

Taylor & Francis Ltd

Access to resources Recommend Favorite

Liquid phase epitaxial growth of AlGaInPAs on GaAs substrates

By Xu Z.L.   Xu W.J.   Li L.   Yang C.Q.   Liu R.   Liu H.D.  

Thin Solid Films, Vol. 338, Iss. 1, 1999-01 ,pp. : 220-223

Elsevier

Access to resources Recommend Favorite

Growth temperature dependence of structural properties for AlN films grown on (Mn,Zn)Fe 2 O 4 substrates

By Ohta J.   Fujioka H.   Ito S.   Oshima M.  

Thin Solid Films, Vol. 435, Iss. 1, 2003-07 ,pp. : 218-221

Elsevier

Access to resources Recommend Favorite