Modified C-t technique for determining the generation lifetime profile in MeV He + implanted silicon

Author： Mohacsy T. Khanh N.Q. Adam M. Gyulai J.

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.50, Iss.3, 1998-07, pp. : 399-401

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Gettering of implanted Au in MeV?C implanted Si

By Mohapatra S. Joseph B. Satpati B. Mahapatras D.P.

Applied Physics A, Vol. 82, Iss. 2, 2006-02 ,pp. : 297-304

Springer Publishing Company

Access to resources Recommend Favorite

Low R_ons in 3kV 4H-SiC UMOSFET with MeV Implanted Buried P-Base Region

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 769-772

Trans Tech Publications

Access to resources Recommend Favorite

Radiation defects introduced by MeV electrons in argon implanted MOS structures

By Kaschieva S. Dmitriev S.

Applied Physics A, Vol. 94, Iss. 2, 2009-02 ,pp. : 257-261

Springer Publishing Company

Access to resources Recommend Favorite

Antiproton-deuteron scattering at 600 MeV/ c

By Yu-shun Zhang

The European Physical Journal A - Hadrons and Nuclei, Vol. 22, Iss. 3, 2004-12 ,pp. : 515-517

Springer Publishing Company

Access to resources Recommend Favorite

Measurement of R LT and A TL in the 4 He(e, e'p) 3 H reaction at p miss of 130-300 MeV/ c

By Aniol K.

The European Physical Journal A - Hadrons and Nuclei, Vol. 22, Iss. 3, 2004-12 ,pp. : 449-454

Springer Publishing Company

Access to resources Recommend Favorite