The effect of the MBE growth rate on the surface phase diagram for GaAs (001)

By Preobrazhenskii V.V.   Lubyshev D.I.   Reginski K.   Muszalski J.  

Thin Solid Films, Vol. 267, Iss. 1, 1995-10 ,pp. : 51-53

Elsevier

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MBE growth of lattice-matched and mismatched films on non-(001) GaAs substrates

By Fahy M.R.   Zhang X.M.   Tok E.S.   Neave J.H.   Joyce B.A.   Vaccaro P.   Fujita K.   Takahashi M.   Watanabe T.   Sato K.  

Thin Solid Films, Vol. 306, Iss. 2, 1997-09 ,pp. : 192-197

Elsevier

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Structural properties of MBE grown GaMnAs layers

By Sadowski J.   Domagala J.Z.   Bak-Misiuk J.   Kolesnik S.   Swiatek K.   Kanski J.   Ilver L.  

Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. : 165-167

Elsevier

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Defects and localized states in MBE-grown GaAs 1- x N x solid solutions prepared by molecular-beam epitaxy

By Polyakov A. Y.   Smirnov N. B.   Govorkov A. V.   Bublik V. T.   Botchkarev A. E.   Griffin James A.   Johnstone Daniel K.   Steiner Todd   Noor Mohammad S.  

Philosophical Magazine, Vol. 83, Iss. 21, 2003-07 ,pp. : 2531-2544

Taylor & Francis Ltd

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MBE growth and applications of silicon interface control layers

By Hasegawa H.  

Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. : 58-67

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