The measurement and control of ionization of the depositing flux during thin film growth

Author： Barber Z.H. Christou C. Chiu K.-F. Garg A.

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.69, Iss.1, 2002-12, pp. : 53-62

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Study of the discharge gas trapping during thin-film growth

By Amorosi S. Anderle M. Benvenuti C. Calatroni S. Carver J. Chiggiato P. Neupert H. Vollenberg W.

Vacuum, Vol. 60, Iss. 1, 2001-01 ,pp. : 89-94

Elsevier

Access to resources Recommend Favorite

Influence of the substrate temperature and deposition flux in the growth of a Bi thin film on the ten-fold decagonal Al-Ni-Co surface

By Sharma H. R.

Philosophical Magazine, Vol. 91, Iss. 19-21, 2011-07 ,pp. : 2870-2878

Taylor & Francis Ltd

Access to resources Recommend Favorite

Modeling Cu thin film growth

By Adams J.B. Wang Z. Li Y.

Thin Solid Films, Vol. 365, Iss. 2, 2000-04 ,pp. : 201-210

Elsevier

Access to resources Recommend Favorite

Fabrication of ZnTe-Au composite microcrystallites utilizing island growth during thin film deposition

By Takeda Y. Satoh T. Motohiro T. Hioki T. Noda S.

Thin Solid Films, Vol. 278, Iss. 1, 1996-05 ,pp. : 18-21

Elsevier

Access to resources Recommend Favorite

Stress development during thin film growth and its modification under ion irradiation

By Pienkos T. Gladyszewski L. Proszynski A. Chocyk D. Gladyszewski G. Martin F. Jaouen C. Drouet M. Lamongie B.

Vacuum, Vol. 70, Iss. 2, 2003-03 ,pp. : 243-248

Elsevier

Access to resources Recommend Favorite