Microstructure of GaN layers grown on Si(111) revealed by TEM

Author: Dobos L.   Pecz B.   Feltin E.   Beaumont B.   Gibart P.  

Publisher: Elsevier

ISSN: 0042-207X

Source: Vacuum, Vol.71, Iss.1, 2003-05, pp. : 285-291

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Abstract