Doped vs. undoped Si 1-x-y Ge x C y layers in sub-100 nm vertical p-channel MOSFETs

By Yang M.   Sturm J.C.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 366-370

Elsevier

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Pseudomorphic Si 1-y C y and Si 1-x-y Ge x C y alloy layers on Si

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Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 98-104

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Optical characterization of thermally oxidized Si 1-x-y Ge x C y layers

By Cuadras A.   Garrido B.   Bonafos C.   Morante J.R.   Fonseca L.   Franz M.   Pressel K.  

Thin Solid Films, Vol. 364, Iss. 1, 2000-03 ,pp. : 233-238

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Hole mobilities in pseudomorphic Si 1-x-y Ge x C y alloy layers

By Duschl R.   Seeberger H.   Eberl K.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 336-339

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Local strains in Si 1-x-y Ge x C y alloys as deduced from vibrational frequencies

By Finkman E.   Rucker H.   Prawer S.D.   Bodnar S.   Regolini J.L.   Bouchier D.   Boulmer J.   Meyer F.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 118-121

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