Characterization of Au/Pb(Zr 0.96 Ti 0.04 )O 3 /Al 2 O 3 /Si antiferroelectric field-effect transistors for memory application

Author: Weng Xu-Dong  

Publisher: Springer Publishing Company

ISSN: 1385-3449

Source: Journal of Electroceramics, Vol.25, Iss.2-4, 2010-10, pp. : 174-178

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract