First physical model of human tissue skin based memristors and their network

Author: Kosta Shiv Prasad  

Publisher: Inderscience Publishers

ISSN: 1755-0653

Source: International Journal of Medical Engineering and Informatics, Vol.5, Iss.1, 2013-01, pp. : 5-19

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Abstract

Exploratory human tissue skin (HTS)-based memristors and their networks (two in series/parallel combination) with essential memristance characteristics are presented. Exploratory effects of variables viz. applied emf E+/−, memristor forming probe distance (d), size and shape of probes and their polarisation (with respect to finger alignment), on resistance R variation with applied emf E+/−, R retainablility with elapsed time, and charge Q variation with time for continuous flow of applied current are studied and depicted in brief. Applications in bio-electronics and bio-medical electronics are envisaged.