Author： Gold A.
Publisher： Springer Publishing Company
ISSN： 0896-1107
Source： Journal of Superconductivity: Incorporating Novel Magnetism, Vol.16, Iss.2, 2003-04, pp. : 303-305
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Abstract
We present results for the single-particle relaxation time of the spin-polarized two-dimensional electron gas in Silicon-MOSFET systems at zero temperatures. Spin-polarization is produced by the application of a parallel magnetic field. The single-particle relaxation time was measured with the Shubnikovde–Hass effect and is in good agreement with our theoretical results.
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