Optical properties of epitaxial CuGaS 2 layers on Si(111)

Author： Eberhardt J.   Metzner H.   Hahn T.   Reislohner U.   Cieslak J.   Grossner U.   Goldhahn R.   Hudert F.   Gobsch G.   Witthuhn W.  

Publisher： Elsevier

ISSN： 0022-3697

Source： Journal of Physics and Chemistry of Solids, Vol.64, Iss.9, 2003-09, pp. : 1781-1785

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Microstructure of epitaxial CuGaS 2 on Si(111)

By Cieslak J.   Metzner H.   Hahn T.   Reislohner U.   Kaiser U.   Krauszlich J.   Witthuhn W.  

Journal of Physics and Chemistry of Solids, Vol. 64, Iss. 9, 2003-09 ,pp. : 1777-1780

Elsevier

Access to resources Recommend Favorite

Photoluminescence of site-selectively Zn-doped CuGaS 2 /GaP epitaxial layers

By Iida S.   Ichinokura H.   Toyama Y.   Kato A.  

Journal of Physics and Chemistry of Solids, Vol. 64, Iss. 9, 2003-09 ,pp. : 2017-2020

Elsevier

Access to resources Recommend Favorite

Structural properties of MBE grown Cu(In,Ga)S 2 layers on Si

By Metzner H.   Hahn T.   Cieslak J.   Eberhardt J.   Muller M.   Reislohner U.   Kaiser U.   Chuvilin A.   Krauszlich J.   Witthuhn W.  

Journal of Physics and Chemistry of Solids, Vol. 64, Iss. 9, 2003-09 ,pp. : 1491-1494

Elsevier

Access to resources Recommend Favorite

RECOMBINAISONS RADIATIVES DANS CuGaS2

By  

Le Journal de Physique Colloques, Vol. 35, Iss. C3, 1974-04 ,pp. : C3-165-C3-171

Edp Sciences

Access to resources Recommend Favorite

TRANSITION METAL IONS AS STOICHIOMETRY SENSORS OF CuGaS2

By  

Le Journal de Physique Colloques, Vol. 36, Iss. C3, 1975-09 ,pp. : C3-47-C3-51

Edp Sciences

Access to resources Recommend Favorite