Structural properties of MBE grown Cu(In,Ga)S 2 layers on Si

By Metzner H.   Hahn T.   Cieslak J.   Eberhardt J.   Muller M.   Reislohner U.   Kaiser U.   Chuvilin A.   Krauszlich J.   Witthuhn W.  

Journal of Physics and Chemistry of Solids, Vol. 64, Iss. 9, 2003-09 ,pp. : 1491-1494

Elsevier

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Microstructure of epitaxial CuGaS 2 on Si(111)

By Cieslak J.   Metzner H.   Hahn T.   Reislohner U.   Kaiser U.   Krauszlich J.   Witthuhn W.  

Journal of Physics and Chemistry of Solids, Vol. 64, Iss. 9, 2003-09 ,pp. : 1777-1780

Elsevier

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Optical properties of epitaxial CuGaS 2 layers on Si(111)

By Eberhardt J.   Metzner H.   Hahn T.   Reislohner U.   Cieslak J.   Grossner U.   Goldhahn R.   Hudert F.   Gobsch G.   Witthuhn W.  

Journal of Physics and Chemistry of Solids, Vol. 64, Iss. 9, 2003-09 ,pp. : 1781-1785

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Growth of GaAs nanowhisker arrays by magnetron sputtering on Si(111) substrates

By Soshnikov I.   Dubrovskii V.   Sibirev N.   Barchenko V.   Veretekha A.   Cirlin G.   Ustinov V.  

Technical Physics Letters, Vol. 32, Iss. 6, 2006-06 ,pp. : 520-522

MAIK Nauka/Interperiodica

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Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy

By Soshnikov I.   Cirlin G.   Tonkikh A.   Nevedomski V.   Samsonenko Yu.   Ustinov V.  

Physics of the Solid State, Vol. 49, Iss. 8, 2007-08 ,pp. : 1440-1445

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