Asymmetric drain underlap dopant-segregated Schottky barrier ultrathin-body SOI MOSFET for low-power mixed-signal circuits

Author: Patil Ganesh C.   Qureshi S.  

Publisher: IOP Publishing

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.28, Iss.4, 2013-04, pp. : 45002-45010

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Abstract