HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature

Author： Almeida L.   Dhar N.   Martinka M.   Dinan J.  

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.29, Iss.6, 2000-06, pp. : 754-759

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Dislocation Analysis in (112)B HgCdTe/CdTe/Si

By Benson J.  

Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. : 1847-1853

Springer Publishing Company

Access to resources Recommend Favorite

Characterization of Dislocations in (112)B HgCdTe/CdTe/Si

By Benson J.  

Journal of Electronic Materials, Vol. 39, Iss. 7, 2010-07 ,pp. : 1080-1086

Springer Publishing Company

Access to resources Recommend Favorite

CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

By Dhar N.   Boyd P.   Martinka M.   Dinan J.   Almeida L.   Goldsman N.  

Journal of Electronic Materials, Vol. 29, Iss. 6, 2000-06 ,pp. : 748-753

Springer Publishing Company

Access to resources Recommend Favorite

Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates

By Reddy M.  

Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. : 1706-1716

Springer Publishing Company

Access to resources Recommend Favorite

Surface passivation of HgCdTe by CdZnTe and its characteristics

By Lee T.   Choi K.   Jeoung Y.   Kim H.   Kim J.   Kim Y.   Chang J.   Song W.   Kim S.   Park M.   Lee S.  

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 552-555

Springer Publishing Company

Access to resources Recommend Favorite