Engineering phase formation thermo-chemistry for crystal growth of homogeneous ternary and quaternary III–V compound semiconductors from melts

Author: Dutta P.   Miller T.  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.29, Iss.7, 2000-07, pp. : 956-963

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Abstract

Based on intrinsic alloy phase formation chemistry and thermodynamics, a novel and unique way of producing compositionally homogeneous multi-component (binary, ternary, quaternary) semiconductor materials is presented. A free energy minimization computer program licensed from AEA Technology Engineering Software, Inc., has been employed to study the composition of the solidifying phases from Ga-In-As-Sb melts at different temperatures and with various liquid compositions. The solid phases have been identified (theoretically and experimentally) to be either ternary compounds of Ga1−xInxAsySb1−y depending on the melt temperature and composition. By engineering the thermochemistry of preferential phase formation in the Ga-In-As-Sb melt, compositionally uniform, single phase, crack free, large polycrystalline Ga1−xInxSb and Ga1−xInxAs have been grown.