Effect of As Passivation on Vapor-Phase Epitaxial Growth of Ge on (211)Si as a Buffer Layer for CdTe Epitaxy
Author： Shintri Shashidhar
Publisher： Springer Publishing Company
ISSN： 1543-186X
Source： Journal of Electronic Materials, Vol.40, Iss.8, 2011-08, pp. : 1637-1641
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