Effect of As Passivation on Vapor-Phase Epitaxial Growth of Ge on (211)Si as a Buffer Layer for CdTe Epitaxy

By Shintri Shashidhar  

Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. : 1637-1641

Springer Publishing Company

Access to resources Recommend Favorite

Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy

By Yasuda K.  

Journal of Electronic Materials, Vol. 39, Iss. 7, 2010-07 ,pp. : 1118-1123

Springer Publishing Company

Access to resources Recommend Favorite

X-ray Diffraction Imaging of Improved Bulk-Grown CdZnTe(211) and Its Comparison with Epitaxially Grown CdTe Buffer Layers on Si and Ge Substrates

By Markunas J.  

Journal of Electronic Materials, Vol. 39, Iss. 6, 2010-06 ,pp. : 738-742

Springer Publishing Company

Access to resources Recommend Favorite

Selective area epitaxy of CdTe

By Luo Y.   Cavus A.   Tamargo M.  

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 511-514

Springer Publishing Company

Access to resources Recommend Favorite

Ex Situ Thermal Cycle Annealing of Molecular Beam Epitaxy Grown HgCdTe/Si Layers

By Farrell S.  

Journal of Electronic Materials, Vol. 39, Iss. 1, 2010-01 ,pp. : 43-48

Springer Publishing Company

Access to resources Recommend Favorite