Fabrication of GaN wafers for electronic and optoelectronic devices

By Xu X.   Vaudo R.P.   Brandes G.R.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 1-5

Elsevier

Access to resources Recommend Favorite

Ferromagnetism of ZnO and GaN: A Review

By Liu C.   Yun F.   Morkoç H.  

Journal of Materials Science: Materials in Electronics, Vol. 16, Iss. 9, 2005-09 ,pp. : 555-597

Springer Publishing Company

Access to resources Recommend Favorite

Atomic structure and electronic properties of the GaN/ZnO (0001) interface

By Pezold J.   Bristowe P.  

Journal of Materials Science, Vol. 40, Iss. 12, 2005-06 ,pp. : 3051-3057

Springer Publishing Company

Access to resources Recommend Favorite

Non-Uniform Strain Field in a Wurtzite GaN Cylinder under Compression and the Related End Friction Effect on Quantum Behavior of Valence-Bands

By Wei X. X.  

Mechanics of Advanced Materials and Structures, Vol. 15, Iss. 8, 2008-11 ,pp. : 612-622

Taylor & Francis Ltd

Access to resources Recommend Favorite

Lattice dynamics behavior in GaN doped with Mg, As, Si, and C

By Aouas M.R.   Sekkal W.   Zaoui A.  

Materials Chemistry and Physics, Vol. 83, Iss. 1, 2004-01 ,pp. : 48-53

Elsevier

Access to resources Recommend Favorite