InGaN/GaN MQW high brightness LED grown by MOCVD

Author： Zhang G.Y.   Yang Z.J.   Tong Y.Z.   Qin Z.X.   Hu X.D.   Chen Z.Z.   Ding X.M.   Lu M.   Li Z.H.   Yu T.J.   Zhang L.   Gan Z.Z.   Zhao Y.   Yang C.F.  

Publisher： Elsevier

ISSN： 0925-3467

Source： Optical Materials, Vol.23, Iss.1, 2003-07, pp. : 183-186

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Study of various strain energy distribution in InGaN/GaN multiple quantum wells

By Lin Yen-Sheng  

Journal of Materials Science, Vol. 41, Iss. 10, 2006-05 ,pp. : 2953-2958

Springer Publishing Company

Access to resources Recommend Favorite

Heat Sink Cooling Fan and Rotation Speed Effect Analysis on Heat Dissipation of High Power GaN LED Package

By  

Advanced Materials Research, Vol. 2014, Iss. 1082, 2015-02 ,pp. : 315-318

Trans Tech Publications

Access to resources Recommend Favorite

Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD

By Motlan   Goldys E.M.   Butcher K.S.A.   Tansley T.L.  

Materials Letters, Vol. 58, Iss. 1, 2004-01 ,pp. : 80-83

Elsevier

Access to resources Recommend Favorite

Performance InGaN and AlGaInP LED Characteristic Dependence on Quantum Wells

By  

Advanced Materials Research, Vol. 2014, Iss. 1070, 2015-01 ,pp. : 600-603

Trans Tech Publications

Access to resources Recommend Favorite

GaN single crystals grown on HVPE seeds in alkaline supercritical ammonia

By Callahan M.   Wang B.-G.   Rakes K.   Bliss D.   Bouthillette L.   Suscavage M.   Wang S.-Q.  

Journal of Materials Science, Vol. 41, Iss. 5, 2006-03 ,pp. : 1399-1407

Springer Publishing Company

Access to resources Recommend Favorite