High resolution X-ray diffraction study of the Si doping influence on columnar crystal growth of GaN layers

Author: Harutyunyan V.S.   Zielinska-Rohozinska E.   Regulska M.  

Publisher: Elsevier

ISSN: 0925-8388

Source: Journal of Alloys and Compounds, Vol.362, Iss.1, 2004-01, pp. : 287-292

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Abstract