InAsN/GaAs quantum dots with an intense and narrow photoluminescence peak at 1.3 m

Author： Jang Y.D.   Yim J.S.   Lee U.H.   Lee D.   Jang J.W.   Park K.H.   Jeong W.G.   Lee J.H.   Oh D.K.  

Publisher： Elsevier

ISSN： 1386-9477

Source： Physica E, Vol.17, Iss.unknown, 2003-04, pp. : 127-128

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface

By Huang J.S.   Chen Z.   Luo X.D.   Xu Z.Y.   Ge W.K.  

Journal of Crystal Growth, Vol. 260, Iss. 1, 2004-01 ,pp. : 13-17

Elsevier

Access to resources Recommend Favorite

Photoluminescence from InAs quantum dots on GaAs(100)

By Cheng W.-Q.   Xie X.-G.   Cai L.-H.   Zhong Z.Y.   Huang Q.   Zhou J.-M.  

Thin Solid Films, Vol. 312, Iss. 1, 1998-01 ,pp. : 287-290

Elsevier

Access to resources Recommend Favorite

Photoluminescence of InP/GaP quantum dots under extreme conditions

By Millot Marius   George Sylvie   Hatami Fariba   Masselink William   Leotin Jean   Gonzalez Jesus   Broto Jean-Marc  

International Journal of High Pressure Research, Vol. 29, Iss. 4, 2009-12 ,pp. : 488-494

Taylor & Francis Ltd

Access to resources Recommend Favorite

Surface morphology and optical property of 1.3 m In 0.5 Ga 0.5 As/GaAs self-organized quantum dots grown by MBE

By Lan Q.   Niu Z.C.   Zhou D.Y.   Kong Y.C.   Wang X.D.   Miao Z.H.   Feng S.L.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 114-116

Elsevier

Access to resources Recommend Favorite

Two different types of 'natural' quantum dots in narrow GaAs/AlGaAs QWs

By Steffan A.G.   Phillips R.T.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 15-18

Elsevier

Access to resources Recommend Favorite