Journal of Materials Research,volume 32,issue 21  (07-2017)

Period of time： 2017年21期

Publisher： Cambridge University Press

Founded in： 1986

Total resources： 436

E-ISSN： 2044-5326|32|21

ISSN： 0884-2914

Subject： TQ Chemical Industry

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Journal of Materials Research,volume 32,issue 21

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JMR volume 32 issue 21 Cover and Back matter

Journal of Materials Research,volume 32,issue 21 , Vol. 32, Iss. 21, 2017-11 , pp. b1-b5

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JMR volume 32 issue 21 Cover and Front matter

Journal of Materials Research,volume 32,issue 21 , Vol. 32, Iss. 21, 2017-11 , pp. f1-f5

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Introduction

Journal of Materials Research,volume 32,issue 21 , Vol. 32, Iss. 21, 2017-11 , pp. 3921-3923

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Ultrathin oxide films: Epitaxy at the two-dimensional limit

Journal of Materials Research,volume 32,issue 21 , Vol. 32, Iss. 21, 2017-10 , pp. 3924-3935

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Two-dimensional Frank–van-der-Merwe growth of functional oxide and nitride thin film superlattices by pulsed laser deposition

Journal of Materials Research,volume 32,issue 21 , Vol. 32, Iss. 21, 2017-07 , pp. 3936-3946

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Interaction between semicoherent interfaces and Volterra-type dislocations in dissimilar anisotropic materials

Journal of Materials Research,volume 32,issue 21 , Vol. 32, Iss. 21, 2017-08 , pp. 3947-3957

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Strain landscapes and self-organization of free surfaces in complex oxide epitaxy

Journal of Materials Research,volume 32,issue 21 , Vol. 32, Iss. 21, 2017-08 , pp. 3958-3976

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Distributions of kinetic pathways in strain relaxation of heteroepitaxial films

Journal of Materials Research,volume 32,issue 21 , Vol. 32, Iss. 21, 2017-10 , pp. 3977-3991

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A review on low dimensional metal halides: Vapor phase epitaxy and physical properties

Journal of Materials Research,volume 32,issue 21 , Vol. 32, Iss. 21, 2017-08 , pp. 3992-4024

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Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications

Journal of Materials Research,volume 32,issue 21 , Vol. 32, Iss. 21, 2017-09 , pp. 4025-4040

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