International Journal of Microwave and Wireless Technologies,volume 2,issue 1  (02-2010)

Period of time： 2010年1期

Publisher： Cambridge University Press

Founded in： 2005

Total resources： 49

E-ISSN： 1759-0795|2|1

ISSN： 1759-0787

Subject： H0 Linguistics

Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

International Journal of Microwave and Wireless Technologies,volume 2,issue 1

Menu

MRF volume 2 issue 1 Cover and Back matter

International Journal of Microwave and Wireless Technologies,volume 2,issue 1 , Vol. 2, Iss. 1, 2010-02 , pp. b1-b2

Cambridge University Press

Abstract Access to resources Recommend Favorite

MRF volume 2 issue 1 Cover and Front matter

International Journal of Microwave and Wireless Technologies,volume 2,issue 1 , Vol. 2, Iss. 1, 2010-02 , pp. f1-f2

Cambridge University Press

Abstract Access to resources Recommend Favorite

Preface

International Journal of Microwave and Wireless Technologies,volume 2,issue 1 , Vol. 2, Iss. 1, 2010-02 , pp. 1-1

Cambridge University Press

Abstract Access to resources Recommend Favorite

AlGaN/GaN epitaxy and technology

International Journal of Microwave and Wireless Technologies,volume 2,issue 1 , Vol. 2, Iss. 1, 2010-02 , pp. 3-11

Cambridge University Press

Abstract Access to resources Recommend Favorite

Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation

International Journal of Microwave and Wireless Technologies,volume 2,issue 1 , Vol. 2, Iss. 1, 2010-02 , pp. 13-20

Cambridge University Press

Abstract Access to resources Recommend Favorite

Industrial GaN FET technology

International Journal of Microwave and Wireless Technologies,volume 2,issue 1 , Vol. 2, Iss. 1, 2010-02 , pp. 21-32

Cambridge University Press

Abstract Access to resources Recommend Favorite

Millimeter-wave GaN-based HEMT development at ETH-Zürich

International Journal of Microwave and Wireless Technologies,volume 2,issue 1 , Vol. 2, Iss. 1, 2010-02 , pp. 33-38

Cambridge University Press

Abstract Access to resources Recommend Favorite

Reliability issues of Gallium Nitride High Electron Mobility Transistors

International Journal of Microwave and Wireless Technologies,volume 2,issue 1 , Vol. 2, Iss. 1, 2010-02 , pp. 39-50

Cambridge University Press

Abstract Access to resources Recommend Favorite

GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project

International Journal of Microwave and Wireless Technologies,volume 2,issue 1 , Vol. 2, Iss. 1, 2010-02 , pp. 51-61

Cambridge University Press

Abstract Access to resources Recommend Favorite

Large-signal modeling of large-size GaN HEMTs with a comprehensive extrinsic elements extraction algorithm

International Journal of Microwave and Wireless Technologies,volume 2,issue 1 , Vol. 2, Iss. 1, 2010-02 , pp. 63-73

Cambridge University Press

Abstract Access to resources Recommend Favorite

Previous 1 2 Next Display item(s) per page Total 17 item(s)