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Boron oxide encapsulated Bridgman growth of high-purity high-resistivity cadmium telluride crystals

By Zha M., Zappettini A., Bissoli F., Zanotti L., Corregidor V., Dieguez E. in (2004)

Elsevier

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Synthesis of ZnO nanoparticles on Si substrates using a ZnS source

By Li Y.J., Duan R., Shi P.B., Qin G.G. in (2004)

Elsevier

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MOCVD selective growth of InP through narrow openings and its application to InP HBT extrinsic base regrowth

By Dong Y., Okuno Y.L., Mishra U.K. in (2004)

Elsevier

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Growth of good quality InGaN multiple quantum wells by MOCVD

By Viswanath A.K., Lee J.I., Kim S.T., Kim D. in (2004)

Elsevier

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Photocurrent measurements on GaAs 1-x N x epilayers grown by metalorganic chemical vapor deposition

By Kim T.S., Cuong T.V., Park C.S., Park J.Y., Lee H.J., Suh E.-K., Hong C.-H. in (2004)

Elsevier

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Properties of self-assembled InAs quantum dots grown by various growth techniques

By Hong S.U., Kim J.S., Lee J.H., Kwack H.S., Han W.S., Oh D.K. in (2004)

Elsevier

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Synthesis of AlGaAs-based strained separately confined heterostructure laser diodes by low temperature liquid-phase epitaxy

By Chandvankar S.S., Shah A.P., Bhattacharya A., Chandrasekaran K.S., Arora B.M. in (2004)

Elsevier

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Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001) Si substrate by metalorganic vapor phase epitaxy

By Tanaka S., Honda Y., Kameshiro N., Iwasaki R., Sawaki N., Tanji T., Ichihashi M. in (2004)

Elsevier

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Influence of Be on N composition in Be-doped InGaAsN grown by RF plasma-assisted molecular beam epitaxy

By Xie S.Y., Yoon S.F., Wang S.Z., Sun Z.Z., Chen P., Chua S.J. in (2004)

Elsevier

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Characterization of heterointerfaces in GaAs/MnAs/MnZn-ferrite structures

By Ito S., Fujioka H., Oshima M. in (2004)

Elsevier

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