Period of time: 2004年1期
Publisher: Elsevier
Founded in: 1976
Total resources: 4
ISSN: 0254-0584
Subject: TB General Industrial Technology
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Materials Chemistry and Physics,volume 83,issue 1
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Activation performance of TiMn 1.25 Cr 0.25 hydrogen storage alloy with various particle sizes
By Xuebin Y., Zu W., Taizhong H., jinzhou C., Baojia X., Naixin X. in (2004)
Materials Chemistry and Physics,volume 83,issue 1 , Vol. 83, Iss. 1, 2004-01 , pp.Preparation of freestanding Fe 4 N crystal by vapor-phase epitaxy under atmospheric pressure
By Takahashi T., Takahashi N., Nakamura T. in (2004)
Materials Chemistry and Physics,volume 83,issue 1 , Vol. 83, Iss. 1, 2004-01 , pp.Mercury-cadmium-selenide thin film layers: structural, microscopic and spectral response studies
By Pujari V.B., Mane S.H., Karande V.S., Dargad J.S., Deshmukh L.P. in (2004)
Materials Chemistry and Physics,volume 83,issue 1 , Vol. 83, Iss. 1, 2004-01 , pp.Synthesis and electrochemical performance of nanosized magnesium tin composite oxides
By Huang F., Yuan Z., Zhan H., Zhou Y., Sun J. in (2004)
Materials Chemistry and Physics,volume 83,issue 1 , Vol. 83, Iss. 1, 2004-01 , pp.Dielectric properties of fine-grained BaTiO 3 prepared by spark-plasma-sintering
By Li B., Wang X., Li L., Zhou H., Liu X., Han X., Zhang Y., Qi X., Deng X. in (2004)
Materials Chemistry and Physics,volume 83,issue 1 , Vol. 83, Iss. 1, 2004-01 , pp.All-optical switching effect in PVK-based optoelectronic composites
By Wu S., Lu M., She W., Yan K., Huang Z. in (2004)
Materials Chemistry and Physics,volume 83,issue 1 , Vol. 83, Iss. 1, 2004-01 , pp.By Ksapabutr B., Gulari E., Wongkasemjit S. in (2004)
Materials Chemistry and Physics,volume 83,issue 1 , Vol. 83, Iss. 1, 2004-01 , pp.By El Hichou A., Addou M., Bougrine A., Dounia R., Ebothe J., Troyon M., Amrani M. in (2004)
Materials Chemistry and Physics,volume 83,issue 1 , Vol. 83, Iss. 1, 2004-01 , pp.Lattice dynamics behavior in GaN doped with Mg, As, Si, and C
By Aouas M.R., Sekkal W., Zaoui A. in (2004)
Materials Chemistry and Physics,volume 83,issue 1 , Vol. 83, Iss. 1, 2004-01 , pp.By Gotoh Y., Fujimura K., Ohkoshi Y., Nagura M., Akamatsu K., Deki S. in (2004)
Materials Chemistry and Physics,volume 83,issue 1 , Vol. 83, Iss. 1, 2004-01 , pp.