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Period of time: 2015年5期
Publisher: IOP Publishing
Founded in: 1988
Total resources: 33
ISSN: 1674-4926
Subject: TN Radio Electronics, Telecommunications Technology
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Journal of Semiconductors,volume 36,issue 5
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Structural and opto-electrical properties of pyrolized ZnO—CdO crystalline thin films
By Karim A. M. M. Tanveer,Khan M. K. R.,Rahman M. Mozibur in (2015)
Journal of Semiconductors,volume 36,issue 5 , Vol. 36, Iss. 5, 2015-05 , pp.![](/images/ico/ico5.png)
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High quality non-rectifying contact of ITO with both Ni and n-type GaAs
By Qingsong Wang,Masao Ikeda,Ming Tan,Pan Dai,Yuanyuan Wu,Shulong Lu,Hui Yang in (2015)
Journal of Semiconductors,volume 36,issue 5 , Vol. 36, Iss. 5, 2015-05 , pp.![](/images/ico/ico5.png)
Deposition and doping of CdS/CdTe thin film solar cells
Journal of Semiconductors,volume 36,issue 5 , Vol. 36, Iss. 5, 2015-05 , pp.![](/images/ico/ico5.png)
A 2-D semi-analytical model of double-gate tunnel field-effect transistor
By Huifang Xu,Yuehua Dai,Ning Li,Jianbin Xu in (2015)
Journal of Semiconductors,volume 36,issue 5 , Vol. 36, Iss. 5, 2015-05 , pp.![](/images/ico/ico5.png)
Charge deposition model for investigating SE-microdose effect in trench power MOSFETs
By Xin Wan,Weisong Zhou,Daoguang Liu,Hanliang Bo,Jun Xu in (2015)
Journal of Semiconductors,volume 36,issue 5 , Vol. 36, Iss. 5, 2015-05 , pp.![](/images/ico/ico5.png)
MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application
By Jiahui Zhou,Hudong Chang,Honggang Liu,Guiming Liu,Wenjun Xu,Qi Li,Simin Li,Zhiyi He,Haiou Li in (2015)
Journal of Semiconductors,volume 36,issue 5 , Vol. 36, Iss. 5, 2015-05 , pp.![](/images/ico/ico5.png)
Thin silicon layer SOI power device with linearly-distance fixed charge islands
By Yuan Zuo,Haiou Li,Jianghui Zhai,Ning Tang,Shuxiang Song,Qi Li in (2015)
Journal of Semiconductors,volume 36,issue 5 , Vol. 36, Iss. 5, 2015-05 , pp.![](/images/ico/ico5.png)
Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers
By Yan Lei,Zhiqiang Liu,Miao He,Xiaoyan Yi,Junxi Wang,Jinmin Li,Shuwen Zheng,Shuti Li in (2015)
Journal of Semiconductors,volume 36,issue 5 , Vol. 36, Iss. 5, 2015-05 , pp.![](/images/ico/ico5.png)
High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells
By Yongping Liao,Yu Zhang,Junliang Xing,Sihang Wei,Hongyue Hao,Guowei Wang,Yingqiang Xu,Zhichuan Niu in (2015)
Journal of Semiconductors,volume 36,issue 5 , Vol. 36, Iss. 5, 2015-05 , pp.