Cation Distribution and Melting Behavior of La 3 Ga 5 M 4+ O 14 (M = Si, Ti, Ge, Zr, Sn, and Hf) Crystals

Author： Takeda Hiroaki Aoyagi Rintaro Okamura Soichiro Shiosaki Tadashi

ISSN： 0015-0193

Source： Ferroelectrics, Vol.295, Iss.1, 2003-01, pp. : 67-76

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Anisotropy of elasticity and minimum thermal conductivity of monocrystal M₄AlC₃ (M = Ti, Zr, Hf)

By Ai-Ling Ding Chun-Mei Li Jin Wang Jing Ao Feng Li Zhi-Qian Chen

Chinese Physics B, Vol. 23, Iss. 9, 2014-09 ,pp. : 96201-96207

IOP Publishing

Access to resources Recommend Favorite

Nonisothermal relaxation and electromigration in single crystals of Ca₃Ga₂Ge₄O₁₄

By Nosenko A. Shevchuk V.

Physics of the Solid State, Vol. 39, Iss. 5, 1997-05 ,pp. : 775-779

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Radiation-induced paramagnetic centers in Ca₃Ga₂Ge₄O₁₄ crystals

By Nosenko A. Leshchuk R. Padlyak B. Sel’skii A.

Physics of the Solid State, Vol. 39, Iss. 6, 1997-06 ,pp. : 938-942

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Laser materials on basis of disordered crystals with Ca3Ga2Ge4O14 structure

Le Journal de Physique IV, Vol. 04, Iss. C4, 1994-04 ,pp. : C4-455-C4-458

Edp Sciences

Access to resources Recommend Favorite

Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O₃ and Pb (Nb,Zr,Sn,Ti)O₃ antiferroelectric thin films deposited on LaNiO₃-buffered silicon substrates by sol-gel processing

By Zhai Jiwei Shen Bo Yao Xi Xu Zhengkui Li Xin Chen Haydn

Journal of Sol-Gel Science and Technology, Vol. 42, Iss. 3, 2007-06 ,pp. : 369-373

Springer Publishing Company

Access to resources Recommend Favorite