On the mechanism of {111}-defect formation in silicon studied by in situ electron irradiation in a high resolution electron microscope

Author： Fedina L.   Gutakovskii A.   Aseev A.   Landuyt J. Van   Anhellemont J.V.  

Publisher： Taylor & Francis Ltd

ISSN： 0141-8610

Source： Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol.77, Iss.2, 1998-02, pp. : 423-435

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