Impact of dopants and silicon structure dimensions on {113}‐defect formation during 2 MeV electron irradiation in an UHVEM

Publisher: John Wiley & Sons Inc

E-ISSN: 1610-1642|12|8|1160-1165

ISSN: 1862-6351

Source: PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.12, Iss.8, 2015-08, pp. : 1160-1165

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