Dark and illuminated characteristics of crystalline silicon solar cells with ECR plasma CVD deposited emitters

By Mahanama G. D. K.   Reehal H. S.  

International Journal of Electronics, Vol. 92, Iss. 9, 2005-09 ,pp. : 525-537

Taylor & Francis Ltd

Access to resources Recommend Favorite

DC magnetron sputter-deposited tungsten silicide films for microelectronic applications

By Hoon Jian-Wei   Chan Kah-Yoong   Tou Teck-Yong  

Microelectronics International, Vol. 28, Iss. 2, 2011-05 ,pp. : 30-33

Emerald Group Publishing Ltd

Access to resources Recommend Favorite

Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC

By Vivona M   Greco G   Giannazzo F   Nigro R Lo   Rascunà S   Saggio M   Roccaforte F  

Semiconductor Science and Technology, Vol. 29, Iss. 7, 2014-07 ,pp. : 75018-75024

IOP Publishing

Access to resources Recommend Favorite

Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells

By Cappelletti M.A.   Casas G.A.   Cédola A.P.   Blancá E L Peltzer y.  

Semiconductor Science and Technology, Vol. 28, Iss. 4, 2013-04 ,pp. : 45010-45016

IOP Publishing

Access to resources Recommend Favorite

Schottky Barrier Height Dependence on the Metal Work Function for p-type 4H-Silicon Carbide

By Lee S.-K.   Zetterling C.-M.   Östling M.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 242-246

Springer Publishing Company

Access to resources Recommend Favorite