Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC

Author： Vivona M   Greco G   Giannazzo F   Nigro R Lo   Rascunà S   Saggio M   Roccaforte F  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.7, 2014-07, pp. : 75018-75024

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Improved Thermal Stability Observed in Ni-Based Ohmic Contacts to n -Type SiC for High-Temperature Applications

By Virshup Ariel  

Journal of Electronic Materials, Vol. 40, Iss. 4, 2011-04 ,pp. : 400-405

Springer Publishing Company

Access to resources Recommend Favorite

Enhancement of the Stability of Ti and Ni Ohmic Contacts to 4H-SiC with a Stable Protective Coating for Harsh Environment Applications

By Daves Walter  

Journal of Electronic Materials, Vol. 40, Iss. 9, 2011-09 ,pp. : 1990-1997

Springer Publishing Company

Access to resources Recommend Favorite

Characterization of tungsten–nickel simultaneous Ohmic contacts to p- and n-type 4H-SiC

By Kragh-Buetow K C   Okojie R S   Lukco D   Mohney S E  

Semiconductor Science and Technology, Vol. 30, Iss. 10, 2015-10 ,pp. : 105019-105027

IOP Publishing

Access to resources Recommend Favorite

Improved Ni ohmic contact on n-type 4H-SiC

By Hallin C.   Yakimova R.   Pécz B.   Georgieva A.   Marinova Ts.   Kasamakova L.   Kakanakov R.   Janzén E.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 119-122

Springer Publishing Company

Access to resources Recommend Favorite

High temperature stability of chromium boride ohmic contacts to p-type 6H-SiC

By Oder T.   Williams J.   Bozack M.   Iyer V.   Mohney S.   Crofton J.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 324-329

Springer Publishing Company

Access to resources Recommend Favorite