A new analytical model for the surface field distribution and optimization of thin film SOI RESURF devices

ISSN： 1362-3060

Source： International Journal of Electronics, Vol.89, Iss.2, 2002-02, pp. : 111-122

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Determination of film and surface recombination in thin-film SOI devices using gated-diode technique

By Rudenko T. Rudenko A. Kilchytska V. Cristoloveanu S. Ernst T. Colinge J.-P. Dessard V. Flandre D.

Solid-State Electronics, Vol. 48, Iss. 3, 2004-03 ,pp. : 389-399

Elsevier

Access to resources Recommend Favorite

An analytical symmetric double-gate SOI MOSFET model

By Jiou Hong-Kee Jang Sheng-Lyang Liu Shau-Shen

International Journal of Electronics, Vol. 86, Iss. 6, 1999-06 ,pp. : 671-683

Taylor & Francis Ltd

Access to resources Recommend Favorite

A New Approach for SOI Devices Small-Signal Parameters Extraction

By Bracale A.

Analog Integrated Circuits and Signal Processing, Vol. 25, Iss. 2, 2000-11 ,pp. : 157-169

Springer Publishing Company

Access to resources Recommend Favorite

Ultralow specific on-resistance high voltage trench SOI LDMOS with enhanced RESURF effect

Journal of Semiconductors, Vol. 36, Iss. 2, 2015-02 ,pp. : 24010-24016

IOP Publishing

Access to resources Recommend Favorite

A high performance RF LDMOSFET in thin film SOI technology with step drift profile

By Luo J. Cao G. Ekkanath Madathil S.N. De Souza M.M.

Solid-State Electronics, Vol. 47, Iss. 11, 2003-11 ,pp. : 1937-1941

Elsevier

Access to resources Recommend Favorite