Publisher: Elsevier
Founded in: 1960
Total resources: 4
E-ISSN: 1879-2405
ISSN: 0038-1101
Subject:
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Solid-State Electronics
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Directional effects on bound quantum states for trench oxide quantum wires on (100)-silicon
By Trellakis A., Ravaioli U. in (2004)
Solid-State Electronics , Vol. 48, Iss. 3, 2004-03 , pp.By Ishihara T., Enda T., Matsuzawa K. in (2004)
Solid-State Electronics , Vol. 48, Iss. 3, 2004-03 , pp.By Pregaldiny F., Lallement C., van Langevelde R., Mathiot D. in (2004)
Solid-State Electronics , Vol. 48, Iss. 3, 2004-03 , pp.Fast switch-off of high voltage 4H-SiC npn bipolar junction transistor from deep saturation regime
By Levinshtein M.E., Ivanov P.A., Agarwal A.K., Palmour J.W. in (2004)
Solid-State Electronics , Vol. 48, Iss. 3, 2004-03 , pp.Analytical heat flow modeling of silicon-on-insulator devices
By Cheng M.-C., Yu F., Habitz P., Ahmadi G. in (2004)
Solid-State Electronics , Vol. 48, Iss. 3, 2004-03 , pp.By Gupta R., Gupta M., Gupta R.S. in (2004)
Solid-State Electronics , Vol. 48, Iss. 3, 2004-03 , pp.Evaluation of heterojunction MOSFETs using UHVCVD deposited tensile-strained Si 1-y C y alloy layers
By Quinones E., Onsongo D., Shi Z., Banerjee S.K. in (2004)
Solid-State Electronics , Vol. 48, Iss. 3, 2004-03 , pp.Numerical modeling study of the InP/InGaAs uni-travelling carrier photodiode
By Srivastava S., Roenker K.P. in (2004)
Solid-State Electronics , Vol. 48, Iss. 3, 2004-03 , pp.Low temperature saturation of p-n junction laser beam induced current signals
By Redfern D.A., Fang W., Ito K., Musca C.A., Dell J.M., Faraone L. in (2004)
Solid-State Electronics , Vol. 48, Iss. 3, 2004-03 , pp.By Mishra J.K., Dash G.N., Pattanaik S.R., Mishra I.P. in (2004)
Solid-State Electronics , Vol. 48, Iss. 3, 2004-03 , pp.