Investigation of device geometry- and temperature-dependent characteristics of AlGaN/GaN lateral field-effect rectifier

By Chen Wanjun   Zhang Jing   Wang Zhigang   Wei Jin   Zhang Bo   Chen Kevin J  

Semiconductor Science and Technology, Vol. 28, Iss. 1, 2013-01 ,pp. : 15021-15025

IOP Publishing

Access to resources Recommend Favorite

Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT

By Kaushik J K   Balakrishnan V R   Panwar B S   Muralidharan R  

Semiconductor Science and Technology, Vol. 28, Iss. 1, 2013-01 ,pp. : 15026-15031

IOP Publishing

Access to resources Recommend Favorite

Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT

By Yong Lei   Hai Lu  

Journal of Semiconductors, Vol. 36, Iss. 7, 2015-07 ,pp. : 74007-74010

IOP Publishing

Access to resources Recommend Favorite

AlGaN/GaN HEMT based liquid sensors

By Mehandru R.   Luo B.   Kang B.S.   Kim J.   Ren F.   Pearton S.J.   Pan C.-C.   Chen G.-T.   Chyi J.-I.  

Solid-State Electronics, Vol. 48, Iss. 2, 2004-02 ,pp. : 351-353

Elsevier

Access to resources Recommend Favorite

Simulation of temperature and electric field-dependent barrier traps effects in AlGaN/GaN HEMTs

By  

Semiconductor Science and Technology, Vol. 30, Iss. 1, 2015-01 ,pp. : 15010-15017

IOP Publishing

Access to resources Recommend Favorite