Single transistor primitive for timing and power modelling of CMOS gates

By Chatzigeorgiou A.   Nikolaidis S.  

International Journal of Electronics, Vol. 87, Iss. 10, 2000-10 ,pp. : 1227-1238

Taylor & Francis Ltd

Access to resources Recommend Favorite

Room temperature operated single electron transistor made by a scanning tunnelling microscopy/atomic force microscopy nano-oxidation process

By Matsumoto Kazuhiko  

International Journal of Electronics, Vol. 86, Iss. 5, 1999-05 ,pp. : 641-662

Taylor & Francis Ltd

Access to resources Recommend Favorite

Analysis of charge density and Fermi level of AlInSb/InSb single-gate high electron mobility transistor

By Chandra S. Theodore   Balamurugan N. B.   Bhuvaneswari M.   Anbuselvan N.   Mohankumar N.  

Journal of Semiconductors, Vol. 36, Iss. 6, 2015-06 ,pp. : 64003-64008

IOP Publishing

Access to resources Recommend Favorite

Modelling the operation of pass transistor and CPL gates

By Chatzigeorgiou A.   Nikolaidis S.  

International Journal of Electronics, Vol. 88, Iss. 9, 2001-09 ,pp. : 977-1000

Taylor & Francis Ltd

Access to resources Recommend Favorite

Modelling of lightly doped collector of a bipolar transistor operating in quasi-saturation region

By Hassan M. M. Shahidul  

International Journal of Electronics, Vol. 86, Iss. 1, 1999-01 ,pp. : 1-14

Taylor & Francis Ltd

Access to resources Recommend Favorite