Analysis of charge density and Fermi level of AlInSb/InSb single-gate high electron mobility transistor

Author： Chandra S. Theodore   Balamurugan N. B.   Bhuvaneswari M.   Anbuselvan N.   Mohankumar N.  

Publisher： IOP Publishing

ISSN： 1674-4926

Source： Journal of Semiconductors, Vol.36, Iss.6, 2015-06, pp. : 64003-64008

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