Author: Kougianos E.
Publisher: Taylor & Francis Ltd
ISSN: 1362-3060
Source: International Journal of Electronics, Vol.95, Iss.5, 2008-01, pp. : 411-423
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Pre-breakdown leakage current fluctuations of thin gate oxide
By Reiner J.C.
Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. :
Gate oxide breakdown characterization on 0.13 m CMOS technology
By Faure D. Bru D. Ali C. Giret C. Christensen K.
Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. :