Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET

By Munteanu D.   Autran J. L.   Harrison S.   Nehari K.   Tintori O.   Skotnicki T.  

Molecular Simulation, Vol. 31, Iss. 12, 2005-10 ,pp. : 831-837

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Compact modeling of symmetrical double-gate MOSFETs including carrier confinement and short-channel effects

By Munteanu D.   Autran J. L.   Loussier X.   Harrison S.   Cerutti R.  

Molecular Simulation, Vol. 33, Iss. 7, 2007-06 ,pp. : 605-611

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2D quantum mechanical device modeling and simulation: Centre-channel (CC) and double-gate (DG) MOSFET

By Kim K.-D.   Won T.-Y.  

Molecular Simulation, Vol. 31, Iss. 12, 2005-10 ,pp. : 825-830

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An explicit carrier-based compact model for nanowire surrounding-gate MOSFET simulation

By He J.   Bian W.   Zhang J.   Feng J.   Zhang X.   Wu W.   Chan M.  

Molecular Simulation, Vol. 34, Iss. 1, 2008-01 ,pp. : 81-87

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Analytical modelling and performance analysis of double-gate MOSFET-based circuit including ballistic/quasi-ballistic effects

By Martinie S.   Munteanu D.   Le Carval G.   Autran J. L.  

Molecular Simulation, Vol. 35, Iss. 8, 2009-07 ,pp. : 631-637

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