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By Munteanu D.   Autran J. L.   Loussier X.   Harrison S.   Cerutti R.  

Molecular Simulation, Vol. 33, Iss. 7, 2007-06 ,pp. : 605-611

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2D quantum mechanical device modeling and simulation: Centre-channel (CC) and double-gate (DG) MOSFET

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Molecular Simulation, Vol. 31, Iss. 12, 2005-10 ,pp. : 825-830

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Compact modeling of the threshold voltage in silicon nanowire MOSFET including 2D-quantum confinement effects

By Autran J. L.   Nehari K.   Munteanu D.  

Molecular Simulation, Vol. 31, Iss. 12, 2005-10 ,pp. : 839-843

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A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs

By Munteanu D.   Moreau M.   Autran J. L.  

Molecular Simulation, Vol. 35, Iss. 6, 2009-05 ,pp. : 491-497

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An explicit carrier-based compact model for nanowire surrounding-gate MOSFET simulation

By He J.   Bian W.   Zhang J.   Feng J.   Zhang X.   Wu W.   Chan M.  

Molecular Simulation, Vol. 34, Iss. 1, 2008-01 ,pp. : 81-87

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