Electron holography study of voids in self-annealed implanted silicon

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Philosophical Magazine Letters, Vol. 78, Iss. 6, 1998-12 ,pp. : 445-451

Taylor & Francis Ltd

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Investigation of thermal donors in Czochralski silicon annealed at 450 o C under high pressure of 1GPa

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Microstructural changes and optical properties of laser annealed bismuth-implanted silicon

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Luminescence and Raman scattering from porous silicon under high hydrostatic pressure: A test for the present models of luminescence

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Photoluminescence studies of light emission from silicon implanted and annealed SiO 2 layers

By Mutti P.   Ghislotti G.   Meda L.   Grilli E.   Guzzi M.   Zanghieri L.   Torricelli A.   Taroni P.   Pifferi A.   Cubeddu R.  

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